Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In<sub>2</sub>O<sub>3</sub> FETs-Reference-Cited by-同舟云学术

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In₂O₃ FETs

Published:2022-06-12 Issue: Volume: Page:
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Container-title:2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Liao Pai-Ying¹,Alajlouni Sami¹,Si Mengwei¹,Zhang Zhuocheng¹,Lin Zehao¹,Noh Jinhyun¹,Wilk Calista¹,Shakouri Ali¹,Ye Peide D.¹

Affiliation:

1. Purdue University,School of Electrical and Computer Engineering,West Lafayette,IN,U.S.A.,47907

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9830116/9830138/09830279.pdf?arnumber=9830279

Reference13 articles.

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3. Thermal Conductivity of Thin Silicon Dioxide Films in Integrated Circuits;kleiner;ESSDERC '95 Proceedings of the 25th European Solid State Device Research Conference ESSDERC,1995

4. Realization of Maximum 2 A/mm Drain Current on Top-Gate Atomic-Layer-Thin Indium Oxide Transistors by Thermal Engineering

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