Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current-Reference-Cited by-同舟云学术

Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Published:2022-11-29 Issue:12 Volume:16 Page:21536-21545
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lin Zehao¹,Si Mengwei¹^ORCID,Askarpour Vahid²,Niu Chang¹^ORCID,Charnas Adam¹,Shang Zhongxia³,Zhang Yizhi³,Hu Yaoqiao⁴^ORCID,Zhang Zhuocheng¹,Liao Pai-Ying¹,Cho Kyeongjae⁴^ORCID,Wang Haiyan³^ORCID,Lundstrom Mark¹,Maassen Jesse²,Ye Peide D.¹^ORCID

Affiliation:

1. Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States

2. Department of Physics and Atmospheric Science, Dalhousie University, Halifax, Nova ScotiaB3H 4R2, Canada

3. School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States

4. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas75080, United States

Funder

Defense Advanced Research Projects Agency

Compute Canada

Air Force Office of Scientific Research

Semiconductor Research Corporation

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c10383

Reference52 articles.

1. Elementary scattering theory of the Si MOSFET

2. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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