Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory-Reference-Cited by-同舟云学术

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Highly Robust All-Oxide Transistors with Ultrathin In₂O₃ as Channel and Thick In₂O₃ as Metal Gate Towards Vertical Logic and Memory

Published:2024-06-16 Issue: Volume:32 Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Lin Z.¹,Zhang Z.¹,Niu C.¹,Dou H.²,Xu K.²,Islam M.¹,Lin J.-Y.¹,Sung C.³,Hong M.³,Ha D.³,Wang H.²,Alam M.A.¹,Ye P. D.¹

Affiliation:

1. School of Electrical and Computer Engineering and, Purdue University,West Lafayette,IN,USA

2. Purdue University,Materials Engineering,West Lafayette,IN,USA

3. Semiconductor R&D Center, Samsung Electronics Co.,Advanced Device Research Lab,South Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631533.pdf?arnumber=10631533

Reference14 articles.

1. ESSDERC ’89

2. Vertical-Gate Si/SiGe Double-HBT-Based Capacitorless 1T DRAM Cell for Extended Retention Time at Low Latch Voltage

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