High Performance (Vth ~ 0 V, SS ~ 69 mV/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09775019.pdf?arnumber=9775019
Reference35 articles.
1. High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition
2. A Study on the Electrical Properties of Atomic Layer Deposition Grown InOxon Flexible Substrates with Respect to N2O Plasma Treatment and the Associated Thin-Film Transistor Behavior under Repetitive Mechanical Stress
3. Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states
4. High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
5. Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
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1. Review—Extremely Thin Amorphous Indium Oxide Transistors;Advanced Materials;2023-12-08
2. Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors;ACS Applied Materials & Interfaces;2023-10-25
3. Frequency Response Characteristics Depending on the Metal Capping Structure and Length of the Amorphous SiZnSnO Thin Film Transistor;Transactions on Electrical and Electronic Materials;2023-06-14
4. Performance improvement of Hf0.45Zr0.55O x ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InO x channels;Nanotechnology;2023-02-13
5. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook;International Journal of Extreme Manufacturing;2023-02-03
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