Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states-Reference-Cited by-同舟云学术

Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states

Published:2016 Issue:32 Volume:4 Page:7571-7576
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sheng Jiazhen¹²³,Choi Dong-won¹²³,Lee Seung-Hwan¹²³,Park Jozeph⁴⁵⁶³,Park Jin-Seong¹²³

Affiliation:

1. Division of Materials Science and Engineering Hanyang University

2. Seongdong-gu

3. Republic of Korea

4. Department of Materials Science and Engineering

5. KAIST

6. Daejeon

Abstract

Atomic layer deposited indium oxide films with the hydrogen peroxide reactant exhibited performance modulation between a semiconductor and a conductor on a flexible substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC01199C

Reference32 articles.

1. Growth mechanism and optoelectronic properties of nanocrystalline In2O3 films prepared by chemical spray pyrolysis of metal-organic precursor

2. Electronic band structure of indium tin oxide and criteria for transparent conducting behavior

3. Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers

4. Transparent conducting oxide semiconductors for transparent electrodes

5. The preparation of transparent electrically conducting indium oxide films by reactive vacuum evaporation

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