High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition-Reference-Cited by-同舟云学术

High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition

Published:2016 Issue:28 Volume:4 Page:6873-6880
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yeom H.-I.¹²³⁴^ORCID,Ko J. B.¹²³⁴,Mun G.¹²³⁴,Park S.-H. Ko¹²³⁴

Affiliation:

1. Department of Materials Science and Engineering

2. Korea Advanced Institute of Science and Technology (KAIST)

3. Daejeon 305-701

4. Republic of Korea

Abstract

A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC00580B

Reference43 articles.

1. Optical Properties of Indium Oxide

2. Electrical Properties of Single Crystals of Indium Oxide

3. Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method

4. High-performance transparent inorganic–organic hybrid thin-film n-type transistors

5. High mobility In2O3:H transparent conductive oxides prepared by atomic layer deposition and solid phase crystallization

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