Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer-Reference-Cited by-同舟云学术

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Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer

Published:2023-02 Issue:2 Volume:70 Page:402-408
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wu Hao¹^ORCID,Kang Xuanwu²^ORCID,Zheng Yingkui²,Wei Ke²^ORCID,Zhao Rikang²^ORCID,Yuan Yafei³,Liu Xinyu²,Zhang Guoqi¹^ORCID

Affiliation:

1. Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai, China

2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

3. Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China

Funder

Natural Science Foundation of China

Guangdong Province Key Technologies Research and Development Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09991982.pdf?arnumber=9991982

Reference25 articles.

1. Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

2. AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

3. Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

4. Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

5. Mechanism of hot electron electroluminescence in GaN-based transistors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study;Applied Physics Letters;2024-05-13

2. Investigation of On-Wafer ESD Characteristics (HBM and TLP) of Lateral GaN-on-Si SBDs;IEEE Transactions on Electron Devices;2023-12

3. A Novel AlGaN/GaN-Based Schottky Barrier Diode With Partial P-GaN Cap Layer and Semicircular T-Anode for Temperature Sensors;IEEE Transactions on Electron Devices;2023-10

4. Unipolar carrier multiplication high-gain and low-noise AlGaN ultraviolet avalanche photodiode with periodically stacked structure;Journal of Physics D: Applied Physics;2023-09-22

5. Simulation analysis of electrical characteristics of P-gate enhanced HEMT with C-doped buffer layer;AIP Advances;2023-09-01

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