Mechanism of hot electron electroluminescence in GaN-based transistors-Reference-Cited by-同舟云学术

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Mechanism of hot electron electroluminescence in GaN-based transistors

Published:2016-09-29 Issue:43 Volume:49 Page:435101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Brazzini Tommaso,Sun Huarui,Sarti Francesco,Pomeroy James W,Hodges Chris,Gurioli Massimo,Vinattieri Anna,Uren Michael J,Kuball Martin

Funder

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=43/a=435101/pdf

Reference40 articles.

1. Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

2. Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence

3. A study of photon emission from n-channel MOSFET's

4. Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

5. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence of polarization-induced energy states at AlGaN/GaN interface;Journal of Physics D: Applied Physics;2024-08-27

2. Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors;IEEE Electron Device Letters;2023-11

3. Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer;IEEE Transactions on Electron Devices;2023-02

4. Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs;IEEE Transactions on Electron Devices;2022-02

5. On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2021-10

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