Improvement of Strained Negative Bias Temperature Instability in Flexible LTPS TFTs by a Stress-Release Design-Reference-Cited by-同舟云学术

Improvement of Strained Negative Bias Temperature Instability in Flexible LTPS TFTs by a Stress-Release Design

Published:2022-03 Issue:3 Volume:69 Page:1532-1537
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Yu-Xuan¹,Chang Ting-Chang²^ORCID,Tai Mao-Chou³^ORCID,Wu Chia-Chuan⁴,Zheng Yu-Zhe⁵,Tu Yu-Fa⁶^ORCID,Chen Jian-Jie⁷,Zhou Kuan-Ju⁷,Shih Yu-Shan⁷,Chen Yu-An⁷,Huang Jen-Wei⁸,Sze Simon⁸

Affiliation:

1. Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Center of Crystal Research and the Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Department of Materials and Optoelectronics, National Sun Yat-sen University, Kaohsiung, Taiwan

6. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

7. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

8. Department of Physics, Military Academy, Kaohsiung, Taiwan

Funder

National Science Council Core Facilities Laboratory for Nano-Science and Nano Technology in Kaohsiung–Pingtung

Ministry of Science and Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09684497.pdf?arnumber=9684497

Reference33 articles.

1. Effective density‐of‐states distributions for accurate modeling of polycrystalline‐silicon thin‐film transistors

2. Conductivity behavior in polycrystalline semiconductor thin film transistors

3. Determination of gap state density in polycrystalline silicon by field‐effect conductance

4. Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors

5. Technology Advances in Flexible Displays and Substrates

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