Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment-Reference-Cited by-同舟云学术

Electrical Characteristics of Si_0.8Ge_0.2 p-MOSFET With TMA Pre-Doping and NH₃ Plasma IL Treatment

Published:2022-04 Issue:4 Volume:69 Page:1776-1780
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lee Meng-Chien¹^ORCID,Chung Nien-Ju¹,Lin Hung-Ru¹,Lee Wei-Li¹^ORCID,Chung Yun-Yan¹^ORCID,Wang Shin-Yuan¹^ORCID,Luo Guang-Li²^ORCID,Chien Chao-Hsin¹^ORCID

Affiliation:

1. Department of Electronics Engineering and the Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan

2. National Nano Device Laboratories, Hsinchu, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09729967.pdf?arnumber=9729967

Reference22 articles.

1. Ge oxide scavenging and gate stack nitridation for strained Si0.7Ge0.3 pFinFETs enabling 35% higher mobility than Si

2. Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

3. Nitride passivation of the interface between high-k dielectrics and SiGe

4. Improving Interface State Density and Thermal Stability of High-$\kappa$ Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5

5. High-Interface-Quality Hf-Based Gate Stacks on Si0.5Ge0.5 Through Aluminum Capping

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO₂/Al₂O₃ Gate Dielectrics;IEEE Transactions on Electron Devices;2023-10

2. Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger;IEEE Journal of the Electron Devices Society;2023

3. Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si_0.8Ge_0.2 Through HfO₂ Dielectric Direct Deposition;IEEE Electron Device Letters;2022-10