Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET
Author:
Affiliation:
1. Southern University of Science and Technology,School of Microelectronics,Shenzhen,China
2. Delft University of Technology,Fac. EEMCS,Delft,Netherlands
Funder
Shenzhen Fundamental Research Program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873376.pdf?arnumber=9873376
Reference6 articles.
1. A Vertical Superjunction MOSFET With n-Si and p-3C-SiC Pillars
2. A High Breakdown Voltage Superjunction MOSFET By Utilizing Double Trench Filling Epitaxy Growth
3. Failure Analysis and Improvement of the Body Diode in Superjunction Power MOSFET
4. A New Semi-SJMOS for Improving the Reverse Recovery Soft and Dynamic Avalanche of the Body Diode
5. Investigations of inhomogeneous reverse recovery behavior of the body diode in superjunction MOSFET
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1. Experimental Demonstration of a 650-V Superjunction MOSFET With Dual Schottky Contacts for Fast Reverse Recovery;IEEE Transactions on Electron Devices;2024-06
2. Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile;Electronics;2023-07-06
3. Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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