Failure Analysis and Improvement of the Body Diode in Superjunction Power MOSFET-Reference-Cited by-同舟云学术

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Failure Analysis and Improvement of the Body Diode in Superjunction Power MOSFET

Published:2018-07 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Ren Min,Yang Mengqi,Zhong Shengrong,Xie Chi,Li Zehong,Gao Wei,Zhang Jinping,Zhang Bo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8443568/8452167/08452547.pdf?arnumber=8452547

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

2. Reverse recovery noise reduction using multi-trench-gate super-junction power MOSFETs with floating columns;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

3. Improved reverse recovery characteristics obtained in 4H‐SiC double‐trench superjunction MOSFET with an integrated p‐type Schottky diode;IET Circuits, Devices & Systems;2020-11

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