Optimization of Reverse Recovery Characteristics Based on Termination Structure for 700V Super-Junction VDMOS
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,P. R. China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10147163/10147396/10147399.pdf?arnumber=10147399
Reference8 articles.
1. Effect of charge imbalance and edge structure on the reverse recovery waveform in superjunction body diode
2. Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET
3. Interaction Mechanism Between CGD and CDS Based on Space Competition and Optimization Method of Dynamic Characteristic for 600V Super-Junction VDMOS
4. Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters
5. Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs
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