Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile
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Published:2023-07-06
Issue:13
Volume:12
Page:2977
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ISSN:2079-9292
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Container-title:Electronics
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language:en
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Short-container-title:Electronics
Author:
Liu Ke1ORCID, Tan Chunjian12ORCID, Li Shizhen1, Yuan Wucheng1ORCID, Liu Xu12, Zhang Guoqi2ORCID, French Paddy2ORCID, Ye Huaiyu12ORCID, Wang Shaogang12ORCID
Affiliation:
1. School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China 2. Faculty of EEMCS, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands
Abstract
This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping profiles to adjust the resistance of the upper half P-pillar. A higher P-pillar resistance can slow down the sweep out speed of hole carriers when the body diode is turned off, thus resulting in a smoother reverse recovery current and reducing the current recovery rate (dir/dt) from a peak to zero. The simulation results show that the reverse recovery peak current (Irrm) of the two proposed devices decreased by 5% and 3%, respectively, compared to the conventional SJ. Additionally, the softness factor (S) increased by 64% and 55%, respectively. Furthermore, this study also demonstrates a trade-off relationship between static and reverse recovery characteristics with the adjustable doping profile, thus providing a guideline for actual application scenarios.
Funder
Shenzhen Fundamental Research Program
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
Reference18 articles.
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