Multi-trench-gate Cell Concept for Low Voltage Superjunction Power MOSFETs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170038.pdf?arnumber=9170038
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Latest Technology Trends in Power Semiconductor Devices;IEEJ Transactions on Electronics, Information and Systems;2024-03-01
2. Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile;Electronics;2023-07-06
3. Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method;Japanese Journal of Applied Physics;2023-01-19
4. Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density;IEEE Transactions on Device and Materials Reliability;2022-09
5. Reverse recovery noise reduction using multi-trench-gate super-junction power MOSFETs with floating columns;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
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