Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
2. Process Integration Technology Development Center, CSMC Technologies Company Ltd, Wuxi, China
Funder
National Natural Science Foundation of China
Basic and Applied Basic Research Foundation of Guangdong Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/7298/9876000/09797881.pdf?arnumber=9797881
Reference18 articles.
1. Elimination of hillock formation in Al interconnects using Ni or Co
2. Electromigration performance of AlCu/Ti and AlCu/Ti/TiN/Ti metallization
3. Novel multilayered Ti/TiN diffusion barrier for Al metallization
4. Applications and Comparison of Failure Analysis Methods
5. Failure analysis approach For TrenchMOS devices;khiam;Proc IPFA,2013
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