Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery-Reference-Cited by-同舟云学术

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Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery

Published:2019-07 Issue:7 Volume:40 Page:1159-1162
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ye Zhi-Yuan^ORCID,Liu Lei,Yao Yao^ORCID,Lin Min-Zhi^ORCID,Wang Peng-Fei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8746723/08706995.pdf?arnumber=8706995

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Superjunction MOSFET with an N-Dot Region in the P-Pillar for Soft Reverse Recovery;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Experimental Demonstration of a 650-V Superjunction MOSFET With Dual Schottky Contacts for Fast Reverse Recovery;IEEE Transactions on Electron Devices;2024-06

3. A 4H-SiC Superjunction MOSFET Design for High Gate Oxide Reliability;2024 4th International Conference on Electronics, Circuits and Information Engineering (ECIE);2024-05-24

4. Machine Learning-Based Figure of Merit Model of SIPOS Modulated Drift Region for U-MOSFET;Micromachines;2024-03-19

5. A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage;Semiconductor Science and Technology;2024-02-08

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