Optimization of Specific ON-Resistance of Superjunction Device with Two-Zones Variation Vertical Doping Profile-Reference-Cited by-同舟云学术

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Optimization of Specific ON-Resistance of Superjunction Device with Two-Zones Variation Vertical Doping Profile

Published:2022-10-25 Issue: Volume: Page:
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Container-title:2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
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Author:

Li Wenjun¹,Huang Haimeng¹,Zhang Zimin²,Cheng Junji¹,Yi Bo¹,Yang Hongqiang¹,Wang Zhiming¹

Affiliation:

1. University of Electronic Science and Technology of China,Institute of Fundamental and Frontier Sciences,Chengdu,China,610054

2. Priosemi Technology Limited Company,Wuxi,China,214000

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9962815/9963138/09963162.pdf?arnumber=9963162

Reference9 articles.

1. Theory of a novel voltage-sustaining layer for power devices

2. An Improved Superjunction Structure With Variation Vertical Doping Profile

3. Ionization Rates for Electrons and Holes in Silicon

4. An analytical model of the electric field distributions of buried superjunction devices

5. Carrier mobilities in silicon empirically related to doping and field

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile;Electronics;2023-07-06

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