Theory of a novel voltage-sustaining layer for power devices-Reference-Cited by-同舟云学术

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Theory of a novel voltage-sustaining layer for power devices

Published:1998-12 Issue:12 Volume:29 Page:1005-1011
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Chen X.B.,Mawby P.A.,Board K.,Salama C.A.T.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Power Semiconductor Devices;Baliga,1995

2. Power MOSFET and HVIC;Chen,1990

3. Optimum doping profile of power MOSFET epitaxial layer

4. Power M.O.S. devices

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