Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 kHz Buck Converter High Current Applications-Reference-Cited by-同舟云学术

Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 kHz Buck Converter High Current Applications

Published:2022-11-07 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Koch Dominik¹,Sharma Ankit²,Huesgen Till²,Kallfass Ingmar¹

Affiliation:

1. University of Stuttgart,Institute of Robust Power Semiconductor Systems,Germany

2. University of Applied Science Kempten,Electronics Integration Lab,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955270.pdf?arnumber=9955270

Reference16 articles.

1. Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications

2. Thermal impedance evaluation of optimized pcb-based gan hemt single-chipprepackage using vgs method;ghebreslassie;Elektronische Baugruppen und Leiterplatten EBL 2022 DVS-Berichte Band 375,2022

3. Experimental Characterization of Silicon and Gallium Nitride 200 V Power Semiconductors for Modular/Multi-Level Converters Using Advanced Measurement Techniques

4. Evaluation of GaN Based Multilevel Converters

5. GaN Transistors for Efficient Power Conversion

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1. PCB-Integrated Pickup-Coil for Overcurrent Detection in High-Current, Paralleled GaN HEMTs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Digital Twin for Gate-Resistor Optimization of Parallel, 100 V, 7 mΩ, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models;2023 IEEE Design Methodologies Conference (DMC);2023-09-24

3. Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28