Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications-Reference-Cited by-同舟云学术

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Gate Driver Concept for Parallel Operation of Low-Voltage High-Current GaN Power Transistors for Mild-Hybrid Applications

Published:2021-06-14 Issue: Volume: Page:
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Container-title:2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Koch Dominik,Weimer Julian,Weiser Mathias,Hueckelheim Jan,Kallfass Ingmar

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9486978/9486980/09487194.pdf?arnumber=9487194

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PCB-Integrated Pickup-Coil for Overcurrent Detection in High-Current, Paralleled GaN HEMTs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Actual Reasons Involving Turn-Off Losses Improvement With Increasing Load and Gate Resistance in MOSFETs Enhanced With Kelvin Source;IEEE Transactions on Industrial Electronics;2024-01

3. Digital Twin for Gate-Resistor Optimization of Parallel, 100 V, 7 mΩ, GaN HEMTs based on Comprehensive Multi-Domain Simulations and Physically-Motivated Transistor Models;2023 IEEE Design Methodologies Conference (DMC);2023-09-24

4. Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 kHz Buck Converter High Current Applications;2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2022-11-07

5. Low-Noise, 24 V, 1 A, 2.1 MHz GaN DC/DC Converter for Variable Power Supply of a GaN-Based Solid-State Power Amplifier;2022 IEEE Applied Power Electronics Conference and Exposition (APEC);2022-03-20

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