A 200V High-Speed Level Shifter for Monolithic GaN IC with Enhanced $\mathrm{d}V_\mathrm{S}/\text{dt}$ Noise Immunity and Negative $V_\mathrm{S}$ Tolerance
Author:
Affiliation:
1. Southeast University,National ASIC System Engineering Research Center,Nanjing,China,210096
2. Wuxi Chipown Micro-electronics limited,Wuxi,China
3. National Key Laboratory of Solid-State Microwave Devices and Circuits,Nanjing,China,210016
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Fund for Transformation of Scientific and Technological Achievements of Jiangsu Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579555.pdf?arnumber=10579555
Reference10 articles.
1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
2. Driving GaN Power Transistors
3. A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI
4. A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC–DC Conversion
5. First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors
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