First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors-Reference-Cited by-同舟云学术

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First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:72nd Device Research Conference
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Author:

Hahn H.,Reuters B.,Kotzea S.,Lukens G.,Geipel S.,Kalisch H.,Vescan A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6863838/6872264/06872396.pdf?arnumber=6872396

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs;Journal of Alloys and Compounds;2024-03

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