A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC

A Monolithic GaN Power IC With On-Chip Gate Driving, Level Shifting, and Temperature Sensing, Achieving Direct 48-V/1-V DC–DC Conversion

Published:2022-12 Issue:12 Volume:57 Page:3865-3876
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Yan Dong¹^ORCID,Ma D. Brian²^ORCID

Affiliation:

1. The University of Texas at Dallas, Richardson, TX, USA

2. Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9962295/09889290.pdf?arnumber=9889290

Reference34 articles.

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2. Design consideration of the active-clamp forward converter with current mode control during large-signal transient

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4. A monolithic GaN direct 48 V/1 V AHB switching power IC with auto-lock auto-break level shifting, self-bootstrapped hybrid gate driving, and on-die temperature sensing;yan;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,0

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