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A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI

  • Published:2018-01 Issue:1 Volume:33 Page:581-594
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Dymond Harry C. P.,Wang JianjingORCID,Liu Dawei,Dalton Jeremy J. O.,McNeill Neville,Pamunuwa Dinesh,Hollis Simon J.,Stark Bernard H.

Funder

U.K. Engineering and Physics Sciences Research Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 121 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and Suppression of Common-Mode Electromagnetic Interference in GaN-Based LLC Converter;2024 7th Asia Conference on Energy and Electrical Engineering (ACEEE);2024-07-20

2. A 200V High-Speed Level Shifter for Monolithic GaN IC with Enhanced $\mathrm{d}V_\mathrm{S}/\text{dt}$ Noise Immunity and Negative $V_\mathrm{S}$ Tolerance;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

3. A Trimming-Less External-RC Relaxation Oscillator With Self-Calibrating Current Reference for a SiC Active Gate Driver Application;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

4. A Study of Optimal Gate Pattern Derivation Method Based on Switching Waveforms of IGBTs by Automatic Pattern Sweep in Active Gate Control;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

5. Load-Independent Class-E Frequency Multipliers;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-05
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