Modeling and Suppression of Common-Mode Electromagnetic Interference in GaN-Based LLC Converter
Author:
Affiliation:
1. State Grid Shanghai Electric Power Research Institute,Shanghai,China
2. School of Astronautics and Aeronautics, University of Electronic Science and Technology of China,Chengdu,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10649889/10651617/10652047.pdf?arnumber=10652047
Reference10 articles.
1. Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage
2. Analysis and Comparison of the Radiated Electromagnetic Interference Generated by Power Converters With Si MOSFETs and GaN HEMTs
3. Integrated Common-Mode Filter for GaN Power Module With Improved High-Frequency EMI Performance
4. A 6.7-GHz Active Gate Driver for GaN FETs to Combat Overshoot, Ringing, and EMI
5. Study of the characteristics and suppression of EMI of inverter with SiC and Si devices
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