Fabrication and dynamic switching characteristics of 6.5kV400A SiC MOSFET module-Reference-Cited by-同舟云学术

Fabrication and dynamic switching characteristics of 6.5kV400A SiC MOSFET module

Published:2020-11-23 Issue: Volume: Page:
ISSN:
Container-title:2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
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Author:

Yujie DU¹,Cui LI¹,Xinling TANG¹,Fei YANG¹,Junmin WU¹,Shiyan LI²,Xiaoxing JIN³,Junming ZHANG⁴

Affiliation:

1. Global Energy Interconnection Research Institute Co., Ltd,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China,102209

2. Nanjing Electronic Device Institute,State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices,Nanjing,China,210016

3. Guo Yang Electronics. Co., Ltd.,Yangzhou,China,225100

4. Zhejiang University,College of Electrical Engineering,Hangzhou,China,310027

Funder

Research and Development

Publisher

IEEE

Link

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