Investigation of Full SiC Power Modules for More Electric Aircraft With Focus on FIT Rate and High-Frequency Switching

Author:

Nakashima Junichi1ORCID,Horiguchi Takeshi1,Mukunoki Yasushige1ORCID,Hatori Kenji2,Tsuda Ryo2,Uemura Hitoshi2,Hagiwara Makoto3ORCID,Urakabe Takahiro3

Affiliation:

1. Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Japan

2. Power Device Works, Mitsubishi Electric Corporation, Fukuoka, Japan

3. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering

Reference28 articles.

1. 6.5-kV full-SiC power module (HV100) with SBD-embedded SiC-MOSFETs;nakashima;Proc Int Exhib Conf Power Electron Intell Motion Renewable Energy Energy Manage,2018

2. Mitsubishi electric's new 6.5 kV full-SiC power semiconductor module achieves world's highest power density,2018

3. 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

4. Design and commissioning of a 10 kV three-phase transformerless inverter with 15 kV silicon carbide MOSFETs;thoma;Proc 20th Eur Conf Power Electron Appl,2018

5. Fabrication and dynamic switching characteristics of 6.5kV400A SiC MOSFET module

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