Design and Verification of Gate Driver for 6.5 kV SiC MOSFET Module-Reference-Cited by-同舟云学术

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Design and Verification of Gate Driver for 6.5 kV SiC MOSFET Module

Published:2021-08-25 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Wang Yijian¹,Liang Lin¹,Shang Hai¹,Han Lubin¹

Affiliation:

1. School of Electrical and Electronic Engineering, Engineering Research Center of Power Safety and Efficiency, Ministry of Education Huazhong University of Science and Technology,State Key Laboratory of Advanced Electromagnetic Engineering and Technology,Wuhan,China

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656072.pdf?arnumber=9656072

Reference30 articles.

1. Isolation design considerations for power supply of medium voltage silicon carbide gate drivers

2. New generation 6.5 kV SiC power MOSFET

3. 15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

4. 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

5. Efficient and Compact 50kW Gen2 SiC Device Based PV String Inverter;mookken;PCIM Europe 2014 International Exhibition and Conference for Power Electronics Intelligent Motion Renewable Energy and Energy Management,0

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