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Full RF characterization for extracting the small-signal equivalent circuit in microwave FETs

  • Published:1996 Issue:12 Volume:44 Page:2625-2633
  • ISSN:0018-9480
  • Container-title:IEEE Transactions on Microwave Theory and Techniques
  • language:
  • Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Reynoso-Hernandez J.A.,Rangel-Patino F.E.,Perdomo J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-Port Measurement of Packaging Parasitic Inductance in SiC Half-Bridge Power Modules Considering Mutual Inductance*;2023 IEEE 3rd International Conference on Industrial Electronics for Sustainable Energy Systems (IESES);2023-07-26

2. A complete small‐signal model of GaAs dual‐gate HEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-04-07

3. Sensitivity of FET parasitic elements extraction due to uncertainty on TRM calibration structures;International Journal of RF and Microwave Computer-Aided Engineering;2021-09-03

4. Parasitic Inductances Extraction for SiC Power Modules Using An Enhanced Two-Port S-Parameter Approach;2021 IEEE Applied Power Electronics Conference and Exposition (APEC);2021-06-14

5. Nondestructive, Self-Contained Extraction Method of Parasitic Resistances in HEMT Devices;IEEE Transactions on Microwave Theory and Techniques;2020-07
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