Two-Port Measurement of Packaging Parasitic Inductance in SiC Half-Bridge Power Modules Considering Mutual Inductance*
Author:
Affiliation:
1. School of Engineering, Cardiff University,Cardiff,United Kingdom
2. Compound Semiconductor Applications Catapult,Newport,United Kingdom
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10253682/10253683/10253690.pdf?arnumber=10253690
Reference13 articles.
1. A Simplified Method for Extracting Parasitic Inductances of MOSFET-Based Half-Bridge Circuit
2. A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement
3. Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module
4. Full RF characterization for extracting the small-signal equivalent circuit in microwave FETs
5. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
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