Sensitivity of FET parasitic elements extraction due to uncertainty on TRM calibration structures-Reference-Cited by-同舟云学术

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Sensitivity of FET parasitic elements extraction due to uncertainty on TRM calibration structures

Published:2021-09-03 Issue:12 Volume:31 Page:
ISSN:1096-4290
Container-title:International Journal of RF and Microwave Computer-Aided Engineering
language:en
Short-container-title:Int J RF Microw Comput Aided Eng

Author:

Pulido‐Gaytan Manuel Alejandro¹^ORCID,Reynoso‐Hernandez J. Apolinar¹^ORCID,Loo‐Yau Jose Raul²^ORCID,Maya‐Sanchez Maria del Carmen¹^ORCID

Affiliation:

1. Centro de Investigación Científica y de Educación Superior de Ensenada Ensenada Baja California Mexico

2. Centro de Investigación y Estudios Avanzados del IPN, Unidad Guadalajara Zapopan Jalisco Mexico

Funder

Consejo Nacional de Ciencia y Tecnología

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.22889

Reference35 articles.

1. Linear Behavioral Models in the Frequency Domain

2. Compact Modeling of High-Power FETs

3. A generalized theory and new calibration procedures for network analyzer self-calibration

4. LRM probe-tip calibrations using nonideal standards

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