A complete small‐signal model of GaAs dual‐gate <scp>HEMT</scp>-Reference-Cited by-同舟云学术

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A complete small‐signal model of GaAs dual‐gate HEMT

Published:2022-04-07 Issue:5 Volume:35 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numerical Modelling

Author:

Huang Yuhan¹,Liu Jun¹,Chen Zhanfei¹

Affiliation:

1. Key Laboratory of RF Circuits and Systems, Ministry of Education Hangzhou Dianzi University Hangzhou China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.3011

Reference23 articles.

1. Theory and Design Methodology for Reverse-Modulated Dual-Branch Power Amplifiers Applied to a 4G/5G Broadband GaN MMIC PA Design

2. Dynamic Dual-Gate Bias Modulation for Linearization of a High-Efficiency Multistage PA

3. Improvement of Conversion Loss of Resistive Mixers Using Bernal-Stacked Bilayer Graphene

4. DennlerP QuayR BrücknerP et al.Watt‐level non‐uniform distributed 6–37 GHz power amplifier MMIC with dual‐gate driver stage in GaN technology. In: IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR); 2014:37‐39.

5. A reliable and efficient small‐signal parameter extraction method for GaN HEMTs

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