Energy-driven Hot-Carrier model in advanced nodes-Reference-Cited by-同舟云学术

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Energy-driven Hot-Carrier model in advanced nodes

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Reliability Physics Symposium
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Author:

Arfaoui W.,Federspiel X.,Mora P.,Monsieur F.,Cacho F.,Roy D.,Bravaix A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6850132/6860565/06861189.pdf?arnumber=6861189

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOS;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Analysis of HCD Effects for NMOS Transistor with Technology Scaling;SoutheastCon 2023;2023-04-01

3. Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Quantitative Hot Carrier Injection Analysis of N-Type Tunnel Field-Effect Transistors;IEEE Access;2023

5. Modeling of Classical Channel Hot Electron Degradation in n-MOSFETs Using TCAD;IEEE Transactions on Electron Devices;2022-07

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