Analysis of HCD Effects for NMOS Transistor with Technology Scaling
Author:
Affiliation:
1. Florida Polytechnic University,Electrical and Computer Engineering,Lakeland,Florida,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10115054/10114957/10115193.pdf?arnumber=10115193
Reference34 articles.
1. Investigation of the emerging materials based high-efficiency cdte solar cell;shabir;7th North American International Conference on Industrial Engineering and Operations Management,2022
2. Ultra fast (<1 ns) electrical characterization of self-heating effect and its impact on hot carrier injection in 14nm FinFETs
3. Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors
4. Chirality engineering on cnts -a new approach to boost the solar cell efficiency;shabir;7th North American International Conference on Industrial Engineering and Operations Management,2022
5. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs
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