Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET-Reference-Cited by-同舟云学术

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Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Zhang Xinyi¹,Wang Kewei¹,Wang Fang¹,Li Jiangjiang¹,Wu Zhicheng²,Li Duoli¹,Li Bo¹,Bu Jianhui³,Han Zhengsheng¹

Affiliation:

1. Institute of Microelectronics of Chinese Academy of Sciences,Beijing,China,100029

2. Chinese Academy of Sciences,State key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics,Beijing,China,100029

3. University of Chinese Academy of Sciences,Beijing,China,100049

Funder

Youth Innovation Promotion Association CAS

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117718.pdf?arnumber=10117718

Reference18 articles.

1. General framework about defect creation at the Si∕SiO2 interface

2. Modeling Framework for Transistor Aging Playback in Advanced Technology Nodes

3. Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

4. New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures

5. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs

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1. Evidence of Transport Degradation in 22 nm FD-SOI Charge Trapping Transistors for Neural Network Applications;Solid-State Electronics;2023-11

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