Transition of erase mechanism for MONOS memory depending on SiN composition and its impact on cycling degradation
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488699.pdf?arnumber=5488699
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Damage and optimization of program/erase operation in MANOS 3D NAND flash memory;Microelectronic Engineering;2023-06
2. Modeling of program/erase transient in heterogeneous SiNx charge trap flash memories;Superlattices and Microstructures;2020-08
3. In situ formation of Hf-based metal/oxide/nitride/oxide/silicon structure for nonvolatile memory application;Japanese Journal of Applied Physics;2018-10-02
4. Theoretical study of the atomistic behavior of O vacancy complexes with N and H atoms in the SiO2 layer of a metal–oxide–nitride–oxide–semiconductor memory: Physical origin of the irreversible threshold voltage shift observed in metal–oxide–nitride–oxide–semiconductor memories;Japanese Journal of Applied Physics;2018-07-20
5. Improvement of erase-retention trade-off in metal–oxide–nitride–oxide–silicon memories by control of nitrogen profile in SiN charge-trapping layer;Japanese Journal of Applied Physics;2014-04-22
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