Damage and optimization of program/erase operation in MANOS 3D NAND flash memory-Reference-Cited by-同舟云学术

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Damage and optimization of program/erase operation in MANOS 3D NAND flash memory

Published:2023-06 Issue: Volume:278 Page:112031
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Fan Yunjie,Wang Zhiqiang,Yang Shengwei,Du Cong,Han Kun,He Yi

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. The future prospect of nonvolatile memory;Kim;IEEE VLSI-TSA-Tech.,2005

2. Future prospects of NAND flash memory technology—the evolution from floating gate to charge trapping to 3D stacking;Lu;J. Nanosci. Nanotechnol.,2012

3. Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory;Kim;J. Semiconduct. Technol. Sci.,2012

4. Charge-trapping device structure of SiO2/SiN/high-k dielectric Al2O3 for high density flash memory;Lee;Appl. Phys. Lett.,2005

5. Charge trapping memory cell of SiO2/SiN/high-k dielectric Al2O3 with TaN metal gate for suppressing backward-tunneling effect;Lee;Appl. Phys. Lett.,2005

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