Modeling of program/erase transient in heterogeneous SiNx charge trap flash memories-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Modeling of program/erase transient in heterogeneous SiNx charge trap flash memories

Published:2020-08 Issue: Volume:144 Page:106577
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Solanki Ravi^ORCID,Manwani Ajay,Mahajan Ashutosh,Patrikar Rajendra M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. Future Outlook of Nand Flash Technology for 40nm Node and beyond;Kim,2006

2. Highly manufacturable 32gb multi–level nand flash memory with 0.0098 μm 2 cell size using tanos (si-oxide-al2o3-tan) cell technology;Park,2006

3. Future prospects of nand flash memory technology-the evolution from floating gate to charge trapping to 3d stacking;Lu;J. Nanosci. Nanotechnol.,2012

4. A novel sonos structure of sio2/sin/al2o3with tan metal gate for multi-giga bit flash memories;Lee,2003

5. Itrs Roadmap, Nand Flash Memory,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intrinsic Charge Trapping and Reversible Charge Induced Structural Modifications in a‐Si₃N₄;Advanced Physics Research;2023-11-16

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP