In situ formation of Hf-based metal/oxide/nitride/oxide/silicon structure for nonvolatile memory application
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=11/a=114201/pdf
Reference36 articles.
1. Impact of gate materials on positive charge formation in HfO2∕SiO2 stacks
2. Spatial Distribution of Charge Traps in a SONOS-Type Flash Memory Using a High- $k$ Trapping Layer
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3. Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer;Japanese Journal of Applied Physics;2022-01-13
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