Localized thermal effect of sub-16nm FinFET technologies and its impact on circuit reliability designs and methodologies
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7106273/7112653/07112712.pdf?arnumber=7112712
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Thermal Machine Learning Solver For Chip Simulation;Proceedings of the 2022 ACM/IEEE Workshop on Machine Learning for CAD;2022-09-12
2. A Thermal Machine Learning Solver For Chip Simulation;2022 ACM/IEEE 4th Workshop on Machine Learning for CAD (MLCAD);2022-09-12
3. A 16nm All-Digital Hardware Monitor for Evaluating Electromigration Effects in Signal Interconnects Through Bit-Error-Rate Tracking;IEEE Transactions on Device and Materials Reliability;2022-06
4. ML-based Fast On-Chip Transient Thermal Simulation for Heterogeneous 2.5D/3D IC Designs;2022 International Symposium on VLSI Design, Automation and Test (VLSI-DAT);2022-04-18
5. Investigation of thermal effects on FinFETs in the quasi-ballistic regime;Japanese Journal of Applied Physics;2018-03-09
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