Investigation of thermal effects on FinFETs in the quasi-ballistic regime
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FD14/pdf
Reference35 articles.
1. Systematical study of 14nm FinFET reliability: From device level stress to product HTOL
2. Localized thermal effect of sub-16nm FinFET technologies and its impact on circuit reliability designs and methodologies
3. Self-heating on bulk FinFET from 14nm down to 7nm node
4. Unified self-heating effect model for advanced digital and analog technology and thermal-aware lifetime prediction methodology
5. Self-heating in advanced CMOS technologies
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime;IEEE Transactions on Nanotechnology;2020
2. Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design;Semiconductor Science and Technology;2018-10-15
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