Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology-Reference-Cited by-同舟云学术

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Reliability characterization of 32nm high-K and Metal-Gate logic transistor technology

Published:2010 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE International Reliability Physics Symposium
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Author:

Pae Sangwoo,Ashok Ashwin,Jingyoo Choi ,Ghani Tahir,Jun He ,Seok-hee Lee ,Lemay Karen,Liu Mark,Lu Ryan,Packan Paul,Parker Chris,Purser Richard,St. Amour Anthony,Woolery Bruce

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488814.pdf?arnumber=5488814

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