Body Bias Impact on I<sub>ON</sub> Degradation in SiGe-Channel pMOS without Si-Cap for DRAM Periphery-Reference-Cited by-同舟云学术

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Body Bias Impact on I_ON Degradation in SiGe-Channel pMOS without Si-Cap for DRAM Periphery

Published:2024-04-14 Issue: Volume: Page:P22.MR-1-P22.MR-5
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Chatterjee Dibyendu¹,Sharma Uma²,Murai Hiroshi³,Kudo Tomohiko³,Singanamalla Raghu²,Liu Haitao²

Affiliation:

1. Micron Technology,Hyderabad,India

2. Micron Technology,Boise,USA

3. Micron Technology,Hiroshima,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529464.pdf?arnumber=10529464

Reference17 articles.

1. SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-μm p-channel MOSFETs

2. NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for $0.10{\mu{\mathrm{m}}}$ gate CMOS generation;Kimizuka,2000

3. NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON

4. A thorough investigation of MOSFETs NBTI degradation

5. On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy?

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