Origin of the endurance degradation in the novel HfO<inf>2</inf>-based 1T ferroelectric non-volatile memories-Reference-Cited by-同舟云学术

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Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Reliability Physics Symposium
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Author:

Yurchuk Ekaterina,Mueller Stefan,Martin Dominik,Slesazeck Stefan,Schroeder Uwe,Mikolajick Thomas,Muller Johannes,Paul Jan,Hoffmann Raik,Sundqvist Jonas,Schlosser Till,Boschke Roman,van Bentum Ralf,Trentzsch Martin

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6850132/6860565/06860603.pdf?arnumber=6860603

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Study of Endurance Performance of SiO₂ Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO₂ Ferroelectric Layer;IEEE Transactions on Electron Devices;2024-08

3. Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors;IEEE Transactions on Electron Devices;2024-08

4. Ultrafast high-endurance memory based on sliding ferroelectrics;Science;2024-07-05

5. Examination of Ferroelectric Domain Dynamics in HZO Under Endurance Cycling Stress;IEEE Electron Device Letters;2024-06

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