The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters-Reference-Cited by-同舟云学术

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The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 International Conference on IC Design and Technology (ICICDT)
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Author:

Cui Miao,Cai Yutao,Bu Qinglei,Liu Wen,Wen Huiqing,Mitrovic Ivona Z.,Talyor Stephen,Chalker Paul R.,Zhao Cezhou

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8784132/8790825/08790909.pdf?arnumber=8790909

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Monolithic E-Mode GaN Boost Converter IC with Improved Gate Driver;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27

2. Dynamic Performance Analysis of Logic Gates Based on p-GaN/AlGaN/GaN HEMTs at High Temperature;IEEE Electron Device Letters;2023-06

3. Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs With AlN/SiN Bilayer Dielectric;IEEE Electron Device Letters;2022-07

4. Building Blocks for GaN Power Integration;IEEE Access;2021

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