Building Blocks for GaN Power Integration

Author:

Basler Michael1ORCID,Reiner Richard1ORCID,Moench Stefan1ORCID,Benkhelifa Fouad1ORCID,Doring Philipp2ORCID,Waltereit Patrick1,Quay Rudiger1ORCID,Ambacher Oliver1ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany

2. Institute of Sustainable Systems Engineering (INATECH), University of Freiburg, Freiburg, Germany

Funder

European Commission (H2020 Program) within the Project “GaNonCMOS”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Engineering,General Materials Science,General Computer Science

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver;IEEE Electron Device Letters;2023-08

2. Three-Phase Motor Inverter and Current Sensing GaN Power IC;Sensors;2023-07-19

3. A Review on Modular Converter Topologies Based on WBG Semiconductor Devices in Wind Energy Conversion Systems;Energies;2023-07-12

4. Integrated GaN digital soft start-up for switching power converters;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

5. GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-06

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