50 nm Overlay Accuracy for Wafer-to-wafer Bonding by High-precision Alignment Technologies

Author:

Mitsuishi Hajime1,Mori Hiroshi1,Maeda Hidehiro1,Ushijima Mikio1,Kamashita Atsushi1,Okada Masashi1,Aramata Masanori1,Shiomi Takashi1,Sakamoto Shinya1,Takahata Kishou1,Chiba Tomohiro1,Fukuda Minoru1,Kanbayashi Masahiro1,Shimoda Toshimasa1,Sugaya Isao1

Affiliation:

1. NIKON CORPORATION,Yokohama,Japan

Publisher

IEEE

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Development of Wafer Bonding System for High Precision Bonding Alignment;International Journal of Precision Engineering and Manufacturing;2024-08-06

2. Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm;Journal of Electronic Materials;2024-06-06

3. Investigation of Distortion in Wafer-to-wafer Bonding with Highly Bowed Wafers;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

4. Development of Next-Generation Distortion Correction Technologies for High-Precision Wafer-to-Wafer Bonding;2024 International Conference on Electronics Packaging (ICEP);2024-04-17

5. Hybrid Bonding for Ultra-High-Density Interconnect;Journal of Electronic Packaging;2024-03-08

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