High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices-Reference-Cited by-同舟云学术

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High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

Published:2011-10 Issue:10 Volume:58 Page:3395-3400
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Imhoff Eugene A.,Kub Francis J.,Hobart Karl D.,Ancona Mario G.,VanMil Brenda L.,Gaskill D. Kurt,Lew Kok-Keong,Myers-Ward Rachael L.,Eddy Charles R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6022820/05983429.pdf?arnumber=5983429

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Tapered Doping Tail Modulated Single Junction Termination Extension for High Voltage 4H-SiC Devices;IEEE Electron Device Letters;2024-07

2. Robust Avalanche in 1.7 kV Vertical GaN Diodes With a Single-Implant Bevel Edge Termination;IEEE Electron Device Letters;2023-10

3. Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations;IEEE Transactions on Electron Devices;2022-12

4. Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors;IEEE Transactions on Electron Devices;2021-03

5. A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices;IEEE Transactions on Electron Devices;2021-03

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