Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations-Reference-Cited by-同舟云学术

Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations

Published:2022-12 Issue:12 Volume:69 Page:6940-6947
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nelson Tolen¹,Pandey Prakash¹^ORCID,Georgiev Daniel G.¹^ORCID,Hontz Michael R.²^ORCID,Koehler Andrew D.³^ORCID,Hobart Karl D.³^ORCID,Anderson Travis J.³^ORCID,Ildefonso Adrian³^ORCID,Khanna Raghav¹^ORCID

Affiliation:

1. EECS Department, University of Toledo, Toledo, OH, USA

2. Philadelphia Division, Naval Surface Warfare Center, Philadelphia, PA, USA

3. U.S. Naval Research Laboratory, Washington, DC, USA

Funder

U.S. Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09931334.pdf?arnumber=9931334

Reference30 articles.

1. A Simplex Method for Function Minimization

2. Simulation and Design of Step-Etched Junction Termination Extensions for GaN Power Diodes

3. Counter-Doped Multizone Junction Termination Extension Structures in Vertical GaN Diodes

4. High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

5. High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices

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1. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance;IEEE Transactions on Electron Devices;2024-06

2. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability;IEEE Electron Device Letters;2024-05

3. Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices;IEEE Transactions on Electron Devices;2024

5. Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04